Mini DIP (SPM3) Application Note (2012-07-09)
6) When repacking devices, use antistatic containers. Unused devices should be stored no longer than
one month.
7) Do not allow external forces or loads to be applied to the devices while they are in storage.
Environment
1) When humidity in the working environment decreases, the human body and other insulators can
easily become charged with electrostatic electricity due to friction. Maintain the recommended
humidity of 40% to 60% in the work environment. Be aware of the risk of moisture absorption by the
products after unpacking from moisture-proof packaging.
2) Be sure that all equipment, jigs and tools in the working area are grounded to earth.
3) Place a conductive mat over the floor of the work area, or take other appropriate measures, so that
the floor surface is grounded to earth and is protected against electrostatic electricity.
4) Cover the workbench surface with a conductive mat, grounded to earth, to disperse electrostatic
electricity on the surface through resistive components. Workbench surfaces must not be
constructed of low-resistance metallic material that allows rapid static discharge when a charged
device touches it directly.
5) Ensure that work chairs are protected with an antistatic textile cover and are grounded to the floor
surface with a grounding chain.
6) Install antistatic mats on storage shelf surfaces.
7) For transport and temporary storage of devices, use containers that are made of antistatic materials
of materials that dissipate static electricity.
8) Make sure cart surfaces that come into contact with device packaging are made of materials that
will conduct static electricity, and are grounded to the floor surface with a grounding chain.
9) Operators must wear antistatic clothing and conductive shoes (or a leg or heel strap).
10) Operators must wear a wrist strap grounded to earth through a resistor of about 1M ? .
11) If the tweezers you use are likely to touch the device terminals, use an antistatic type and avoid
metallic tweezers. If a charged device touches such a low-resistance tool, a rapid discharge can
occur. When using vacuum tweezers, attach a conductive chucking pad at the tip and connect it to
a dedicated ground used expressly for antistatic purposes.
12) When storing device-mounted circuit boards, use a board container or bag that is protected against
static charge. Keep them separated from each other, and do not stack them directly on top of one
another, to prevent static charge/discharge which occurs due to friction.
13) Ensure that articles (such as clip boards) that are brought into static electricity control areas are
constructed of antistatic materials as far as possible.
14) In cases where the human body comes into direct contact with a device, be sure to wear finger
cots or gloves protected against static electricity.
? 2008
FAIRCHILD SEMICONDUCTOR - Smart Power Module
58
相关PDF资料
FSBB15CH60F MODULE SPM 600V SPM27-CA
FSBB20CH60CL SMART POWER MODULE 20A SPM27-CB
FSBB20CH60CT MODULE ADV MOTION SPM SPM27-CC
FSBB20CH60C MODULE MOTION-SPM 600V SPM27-CC
FSBB20CH60SL MODULE SPM 600V 20A SPM27-CA
FSBB30CH60F IC SMART PWR MODULE SPM27-EA
FSBF10CH60BTL MODULE SPM 600V 10A 3PH SPM27-JB
FSBF10CH60BT MODULE SPM 600V 10A 3PH SPM27-JA
相关代理商/技术参数
FSBB15CH60C 制造商:Fairchild Semiconductor Corporation 功能描述:Transistor
FSBB15CH60F 功能描述:IGBT 晶体管 600V SPM RoHS:否 制造商:Fairchild Semiconductor 配置: 集电极—发射极最大电压 VCEO:650 V 集电极—射极饱和电压:2.3 V 栅极/发射极最大电压:20 V 在25 C的连续集电极电流:150 A 栅极—射极漏泄电流:400 nA 功率耗散:187 W 最大工作温度: 封装 / 箱体:TO-247 封装:Tube
FSBB20CH60 功能描述:IGBT 模块 HIGH_POWER RoHS:否 制造商:Infineon Technologies 产品:IGBT Silicon Modules 配置:Dual 集电极—发射极最大电压 VCEO:600 V 集电极—射极饱和电压:1.95 V 在25 C的连续集电极电流:230 A 栅极—射极漏泄电流:400 nA 功率耗散:445 W 最大工作温度:+ 125 C 封装 / 箱体:34MM 封装:
FSBB20CH60B 功能描述:IGBT 模块 600V -20A 3-phase RoHS:否 制造商:Infineon Technologies 产品:IGBT Silicon Modules 配置:Dual 集电极—发射极最大电压 VCEO:600 V 集电极—射极饱和电压:1.95 V 在25 C的连续集电极电流:230 A 栅极—射极漏泄电流:400 nA 功率耗散:445 W 最大工作温度:+ 125 C 封装 / 箱体:34MM 封装:
FSBB20CH60BT 功能描述:IGBT 模块 600V -20A 3-phase RoHS:否 制造商:Infineon Technologies 产品:IGBT Silicon Modules 配置:Dual 集电极—发射极最大电压 VCEO:600 V 集电极—射极饱和电压:1.95 V 在25 C的连续集电极电流:230 A 栅极—射极漏泄电流:400 nA 功率耗散:445 W 最大工作温度:+ 125 C 封装 / 箱体:34MM 封装:
FSBB20CH60C 功能描述:IGBT 模块 600V 20A SPM RoHS:否 制造商:Infineon Technologies 产品:IGBT Silicon Modules 配置:Dual 集电极—发射极最大电压 VCEO:600 V 集电极—射极饱和电压:1.95 V 在25 C的连续集电极电流:230 A 栅极—射极漏泄电流:400 nA 功率耗散:445 W 最大工作温度:+ 125 C 封装 / 箱体:34MM 封装:
FSBB20CH60CL 功能描述:IGBT 模块 20A, Motion-SPM RoHS:否 制造商:Infineon Technologies 产品:IGBT Silicon Modules 配置:Dual 集电极—发射极最大电压 VCEO:600 V 集电极—射极饱和电压:1.95 V 在25 C的连续集电极电流:230 A 栅极—射极漏泄电流:400 nA 功率耗散:445 W 最大工作温度:+ 125 C 封装 / 箱体:34MM 封装:
FSBB20CH60CT 功能描述:IGBT 模块 600V 20A SPM RoHS:否 制造商:Infineon Technologies 产品:IGBT Silicon Modules 配置:Dual 集电极—发射极最大电压 VCEO:600 V 集电极—射极饱和电压:1.95 V 在25 C的连续集电极电流:230 A 栅极—射极漏泄电流:400 nA 功率耗散:445 W 最大工作温度:+ 125 C 封装 / 箱体:34MM 封装: